Alpha and Omega Semiconductor Limited (AOSL) today introduced its next generation (Gen3) 1200V aSiC MOSFETs, designed to maximize efficiency in high power applications such as electric vehicles (EVs), AI data centers, and renewable energy systems. These Gen3 MOSFETs provide up to 30% improved switching figure-of-merit (FOM) compared to AOSL's previous generation.
The performance improvements are achieved while maintaining low conduction losses and without compromising ruggedness and reliability, as the Gen3 MOSFETs have full AEC-Q101 qualification. This makes them suitable for demanding automotive applications and future AI data centers adopting high-voltage DC (HVDC) architectures.
The new Gen3 1200V MOSFETs are available with an on-resistance (Rds(on)) range from 15mOhm to 40mOhm in a TO27-4L package. AOSL also qualified a larger Gen3 1200V/11mOhm MOSFET die for high-power EV traction inverter modules, which is available for wafer sales.
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