ASE Unveils FOCoS-Bridge With TSV, Reducing Power Loss by 3x for Next-Gen AI and HPC

ASX
October 08, 2025

Advanced Semiconductor Engineering, Inc. (ASE) announced the introduction of its Fan-Out Chip-on-Substrate-Bridge (FOCoS-Bridge) with Through Silicon Via (TSV) technology. This innovation is designed to propel technology enablement for artificial intelligence (AI) and high-performance computing (HPC) applications by delivering critical performance improvements. The new technology reduces power loss by 3x, creates a shorter delivery path through TSV, and enables higher I/O density and enhanced thermal dissipation.

The integration of TSV expands ASE’s VIPack™ FOCoS-Bridge capabilities, providing critical energy efficiency at a time of escalating computational requirements across emerging AI and HPC applications. Future chiplet and high-bandwidth memory (HBM) integration will require higher interconnection densities to accommodate parallel higher data rate links and preserve signal integrity, which FOCoS-Bridge with TSV directly addresses.

Progress has been demonstrated using an 85mm x 85mm test vehicle, showing that the resistance and inductance of FOCoS-Bridge with TSV are significantly reduced by 72% and 50%, respectively, compared to FOCoS-Bridge alone. This technological advancement strengthens ASE's strategic commitment to supporting the AI ecosystem with advanced heterogeneous integration solutions, positioning the company at the forefront of high-power and high-bandwidth systems.

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