GlobalFoundries announced on August 28, 2025, the production release of its 130nm complementary Bi-CMOS (CBIC) platform, marking its highest-performance silicon germanium (SiGe) technology to date. This platform is now available for design with a process design kit (PDK).
The 130CBIC platform delivers unmatched performance with NPN transistors exceeding 400 GHz ft/fmax and PNP transistors surpassing 200 GHz. It is designed to address multiple key markets, including smartphones, wireless infrastructure, optical networking, satellite communications, and industrial IoT.
Developed and manufactured at GF’s facility in Burlington, Vermont, 130CBIC is optimized to push the limits of RF performance while reducing cost. It enables innovations such as low-noise amplifiers for cellular smartphones and high-gain-bandwidth amplifiers for high-speed analog and optical networking.
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