ON Semiconductor introduced vertical gallium nitride (vGaN) power semiconductors on October 30, 2025, establishing a new benchmark for power density, efficiency, and ruggedness. This technology is designed to meet the surging energy demands from AI data centers, electric vehicles, and other energy-intensive applications.
Developed and manufactured at ON Semiconductor’s Syracuse, NY fab, the vGaN-on-GaN power semiconductors conduct current vertically through the compound semiconductor. This enables higher operating voltages and faster switching frequencies, leading to significant energy savings and smaller, lighter systems.
The vGaN technology can handle high voltages of 1,200 volts and beyond, reducing losses by almost 50% and making devices approximately three times smaller than commercially available lateral GaN. With over 130 global patents, this breakthrough positions ON Semiconductor for leadership in critical high-power applications across AI data centers, EVs, renewable energy, and aerospace.
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