Weebit Nano Limited announced on October 5, 2025, the successful tape-out of test chips featuring its embedded Resistive Random-Access Memory (ReRAM) module. This milestone was achieved at ON Semiconductor’s 300mm production fab in East Fishkill, NY.
The test chips are being developed within ON Semiconductor’s Treo platform, which is built on a 65nm Bipolar-CMOS-DMOS (BCD) process. This represents a key step towards enabling Weebit ReRAM IP on the Treo platform.
For Treo-based designs, Weebit ReRAM is expected to provide an ultra-low-power, high-density non-volatile memory solution, unlocking new levels of intelligence and functionality. The test chips will now undergo final testing and qualification ahead of anticipated volume production for ON Semiconductor’s next-generation products.
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