Power Integrations announced today a new white paper detailing its 1250 V and 1700 V PowiGaN gallium‑nitride technology for next‑generation 800 VDC AI data centers. The paper, released at the 2025 OCP Global Summit in San Jose, highlights the company’s industry‑first 1250 V PowiGaN HEMTs and the integrated 1700 V PowiGaN switch in its InnoMux‑2‑EP ICs, which support 1000 VDC input and deliver >90.3 % 12 V system efficiency in a liquid‑cooled, fan‑less architecture.
The announcement also confirms a collaboration with NVIDIA to accelerate the transition to 800 VDC power and megawatt‑scale racks. Power Integrations notes that the 1250 V and 1700 V devices provide greater power density and efficiency compared to stacked 650 V GaN FETs and competing 1200 V SiC devices, meeting the >98 % efficiency requirement of the 800 VDC architecture. This partnership positions Power Integrations to supply both main and auxiliary power supplies for AI data centers, a market projected to grow as rack power demands rise.
By introducing these high‑voltage GaN solutions, Power Integrations expands its product portfolio into a high‑margin, high‑growth segment. The collaboration with NVIDIA, a leading AI hardware provider, signals strong customer validation and potential for significant revenue impact as data‑center operators adopt 800 VDC power. The event represents a strategic technology breakthrough that could enhance Power Integrations’ competitive position and drive future growth.
The content on BeyondSPX is for informational purposes only and should not be construed as financial or investment advice. We are not financial advisors. Consult with a qualified professional before making any investment decisions. Any actions you take based on information from this site are solely at your own risk.