Kioxia Corporation and SanDisk Corporation announced the start of operations at Fab2 (K2), a state-of-the-art semiconductor fabrication facility located at the Kitakami Plant in Iwate Prefecture, Japan. This facility is designed to meet the growing market demand driven by artificial intelligence.
Fab2 possesses the capability to produce eighth-generation, 218-layer 3D flash memory, incorporating the companies’ revolutionary CBA (CMOS directly Bonded to Array) technology. It is also equipped to handle future advanced 3D flash memory nodes.
Production capacity at Fab2 will be ramped up in stages over time, aligning with market trends, with meaningful output expected to commence in the first half of 2026. A portion of the investment for Fab2 is subsidized by the Japanese government, as approved in February 2024.
The content on BeyondSPX is for informational purposes only and should not be construed as financial or investment advice. We are not financial advisors. Consult with a qualified professional before making any investment decisions. Any actions you take based on information from this site are solely at your own risk.