OpenLight and Tower Semiconductor announced the successful demonstration of the 400G/lane modulator on Tower's commercially available, integrated silicon photonics platform, PH18DA. This innovation paves the way for a high-volume, silicon photonics 400G/lane platform to meet next-generation 3.2T optical communication architectures. The demonstration achieved a better than 3.5db extinction ratio using the industry-standard PAM-4 modulation format at a drive voltage of 0.6 volts peak-to-peak.
The 400G demonstration is built using OpenLight's IP on Tower's existing silicon photonics platform, which already supports customers at 100G and 200G/lane. This integrated silicon photonics demonstration is designed to support next-generation 400G/lane optical communication architectures, offering a scalable solution from 100G to 200G to 400G. This addresses the growing demand for high-speed data transfer in cloud computing, AI, and machine learning applications.
Operating at 400G per lane across all four CWDM wavelengths, this technology enables a commercially viable path for both DR8 and FR4 next-generation 3.2Tb solutions and beyond. Russell Ellwanger, CEO of Tower Semiconductor, highlighted that this collaboration provides a robust solution for 400G/lane that is immediately ready for customer prototyping. This is a significant step toward providing scalable, reliable, high-performance, and manufacturable solutions for the next generation of optical communication technology.
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