Tower Semiconductor, in collaboration with pSemi, received the Industry Paper Competition Award at the 2025 IEEE International Microwave Symposium (IMS). The award was for their co-authored paper, 'A Low-Loss, Wideband, 0–110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers,' which was presented on June 19, 2025. This recognition highlights a significant innovation in RF switch technology.
The award-winning paper showcases Tower’s PCM RF switch as a major advancement, delivering a record-breaking combination of bandwidth (DC–110 GHz), insertion loss (<2 dB), power handling (30 dBm), and linearity (+15–20 dB improvement over RFSOI CMOS solutions). These performance metrics have not been achieved by any other RF switch technology to date. The technology is enabled by Tower’s proprietary BEOL integration and integrated digital control.
This combination of ultra-low-loss wideband performance, power handling, and full CMOS integration simplifies implementation for end users. It enables advanced circuits for critical applications such as 5G, future 6G, SatCom, beamforming, and millimeter-wave systems. Dr. Ed Preisler, Vice President and General Manager of the RF Business Unit, stated that this achievement reinforces Tower's commitment to advancing RF front-end integration for the next wave of wireless devices.
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