Coherent Corp. announced the launch of its 200 mm silicon carbide epitaxial wafers (SiC epi-wafers), with substrate and epi-wafer shipments now underway at 350 micron and 500 micron thickness. This expansion marks a significant step in the company's SiC materials business.
The new 200 mm SiC epi-wafers are engineered with cutting-edge thickness and doping uniformity, supporting the production of superior SiC power semiconductors. This transition from 150 mm to 200 mm diameter wafers responds to increasing demand for SiC semiconductors.
Gary Ruland, Vice President and General Manager of the SiC Materials Business Unit, stated that adopting larger wafers allows manufacturers to produce 1.8x more devices per wafer, enhancing productivity and reducing costs for applications in electric vehicles, energy infrastructure, and high-power EV chargers.
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